ZEISS MERLIN™ specifications

Analytical Power for the Sub-Nanometer World

Nano Analytics

  • High resolution & high current:
    The GEMINI® II column enables high resolution even at high probe current
  • Optimized for fastest EDX, WDX , EBSD & CL signal acquisition
  • Best-in-class material contrast with unique EsB detector


Total Information

  • Parallel information acquisition of compositional contrast, topographical & crystalline information through complete detection system (CDS)
  • High resolution imaging of non-conductive materials through charge compensation
  • Optimized image quality as a result of in-situ sample cleaning during imaging
  • In-situ 3 dimensional surface modelling


Ease of Use

  • Fastest Sub nm image acquisition including sample transfer in less than 60 seconds
  • Professional results by novice user due to fully automated instrument adjustment
  • No time consuming sample preparation of non-conductive samples due to unique charge compensation


Future Assured

  • Upgradeable building blocks for decades of first class system performance
  • Fastest, forward-design SEM electronics ready for future technology integration
  • Upgradeable detection possibilities by plug & play solutions for years of leading edge technology integration

Technical data

Probe current

  • 10 pA up to 300 nA (depending on system configuration)

Resolution (optimal WD)

  • 0.8 nm @ 15 kV
  • 1.4 nm @ 1 kV
  • 3.0 nm @ 20 kV at 10 nA, WD = 8,5mm
  • 0.6 nm @ 30 kV (STEM mode)

Acceleration voltage

  • 0.02 – 30 kV

Magnification

  • 12 – 2000000 x in SE mode
  • 100 – 2000000 x with EsB® detector

Emitter

  • Thermal field emission type, stability > 0,2%/ h

Specimen stage

  • 5-Axes Motorised Eucentric Specimen Stage
  • X = 130mm
  • Y = 130mm
  • Z = 50mm
  • T = - 3º to 70º
  • R = 360º (continous)
  • Further additional optional stage systems available

Detectors

  • Standard: High efficiency in-lens SE detector
  • Everhart Thornley Secondary Electron detector

Chamber

  • Optional: EsB® detector with filtering grid, filtering voltage 0 – 1500 V
  • Integrated AsB® detector
  • 330 mm (Ø) x 270 mm (h)
  • 15 accessory ports for various options including STEM, 4QBSD, EBSD, EDS, WDS
  • CCD-Camera with IR-illumination
  • Charge compensation with in-situ cleaning (optional)